DocumentCode
2868657
Title
A 16K × 1b static RAM
Author
Pashley, R. ; Owen, W. ; Owen, J. ; Shappir, Joseph ; Smith, Ross ; Liu, Siyuan ; Jecmen, R.
Author_Institution
Intel Corp., Santa Clara, CA, USA
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
106
Lastpage
107
Abstract
This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.
Keywords
Circuits; Current supplies; Decoding; Paper technology; Pins; Power dissipation; Power supplies; Random access memory; Read-write memory; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1156012
Filename
1156012
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