DocumentCode
2868825
Title
An efficient semi-mathematical model for co-pack IGBT
Author
Chen, Na ; Deng, Yan ; Wu, Jiande ; He, Xiangning
Author_Institution
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear
2011
fDate
6-11 March 2011
Firstpage
1833
Lastpage
1837
Abstract
An efficient and easily-realized semi-mathematical model of co-pack IGBT is proposed, based on existing built-in models for circuit simulator. With clamped inductive load there is strong interaction between the IGBT and the internal anti-parallel freewheeling diode (FWD) in the co-packed totem pole modules. This model provides a user-friendly co-pack IGBT model in which IGBT and its FWD are modeled as a whole. The comparison between simulation results and experimental waveforms has been made and good consistency is obtained in transient behavior.
Keywords
circuit simulation; insulated gate bipolar transistors; waveform analysis; FWD; circuit simulator; clamped inductive load; copacked totem pole module; internal anti-parallel freewheeling diode; semi-mathematical model; user-friendly copack IGBT; waveform; Analytical models; Capacitance; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location
Fort Worth, TX
ISSN
1048-2334
Print_ISBN
978-1-4244-8084-5
Type
conf
DOI
10.1109/APEC.2011.5744845
Filename
5744845
Link To Document