DocumentCode
2868847
Title
Nonvolatile solid-state memory
Author
Sass, A.
Author_Institution
General Instrument Corp., Hicksville, NY, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
103
Lastpage
103
Abstract
New developments in nonvolatile solid-state memory promise users a spectrum of technologies for various degrees of programmability/reprogrammability. These advancements in such areas as low-power MOS, EPROM, EEPROM and magnetic bubbles will be discussed from the standpoint of functionality, performance, cost and availability as related to application. Long range projections of capability will also be offered.
Keywords
Consumer electronics; EPROM; Instruments; Magnetic semiconductors; Military computing; Nonvolatile memory; Read only memory; Solid state circuits; Tiles; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156023
Filename
1156023
Link To Document