Title :
Nonvolatile solid-state memory
Author_Institution :
General Instrument Corp., Hicksville, NY, USA
Abstract :
New developments in nonvolatile solid-state memory promise users a spectrum of technologies for various degrees of programmability/reprogrammability. These advancements in such areas as low-power MOS, EPROM, EEPROM and magnetic bubbles will be discussed from the standpoint of functionality, performance, cost and availability as related to application. Long range projections of capability will also be offered.
Keywords :
Consumer electronics; EPROM; Instruments; Magnetic semiconductors; Military computing; Nonvolatile memory; Read only memory; Solid state circuits; Tiles; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156023
