DocumentCode
2868910
Title
Development of a RF waveform stress test procedure for GaN HFETs subjected to infinite VSWR sweeps
Author
McGenn, W. ; Choi, H. ; Lees, J. ; Uren, M.J. ; Benedikt, J. ; Tasker, P.J.
Author_Institution
Cardiff School of Engineering, Cardiff University, CF24 3QR, UK
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
An RF waveform stress test has been developed in order to assess device degradation caused by the infinite VSWR conditions that could result from the removal of a protection isolator. The proposed stress test involves both DC and RF characterization of a device, before and after an RF stressing mechanism is applied. The procedure was first applied with the device being stressed whilst driving into its optimum impedance and secondly with the device being stressed by one of the three potential failure regions that result from an infinite VSWR sweep.
Keywords
Gallium nitride; HEMTs; Impedance; MODFETs; Power generation; Radio frequency; Stress; Gallium Nitride; HEMTs; microwave amplifiers; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259725
Filename
6259725
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