DocumentCode :
2868932
Title :
Ultra-wideband medium-power GaAs MESFET amplifiers
Author :
Hua Tserng ; Macksey, H.
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Volume :
XXIII
fYear :
1980
fDate :
13-15 Feb. 1980
Firstpage :
166
Lastpage :
167
Abstract :
The design and performance of 5-18GHz single and multi-stage GaAs MESFET amplifiers with 1O0-300mW output will be discussed.
Keywords :
Broadband amplifiers; FETs; Frequency; Gallium arsenide; Inductors; MESFETs; Power amplifiers; Power generation; Radiofrequency amplifiers; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1980.1156027
Filename :
1156027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2868932
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