DocumentCode
2869053
Title
A DC voltage dependent switchable acoustically coupled BAW filter based on BST-on-silicon composite structure
Author
Sis, Seyit Ahmet ; Lee, Victor ; Phillips, Jamie D. ; Mortazawi, Amir
Author_Institution
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
A DC voltage dependent switchable, bulk acoustic wave (BAW) filter is presented in this paper. The filter has a composite structure consisting of a barium strontium titanate (BST) layer sandwiched between top and bottom platinum (Pt) electrodes deposited on silicon (Si) and oxide (SiO2 ) layers. The electrostrictive property of ferroelectric BST allows for the filter to be turned on and off by applying an electric field across the BST layer. The Si and SiO2 layers are used to increase the overall quality factor and mechanical strength of the structure. When the filter is turned on, the 3 dB bandwidth is 43 MHz at a center frequency of 1.08 GHz. After resonating out the input and output static capacitances of the filter using shunt inductors, the filter exhibits an insertion loss of 8.5 dB with the application of 25 V DC bias. The return loss and out-of-band rejection of the filter are 18 dB and 29 dB, respectively. In its off state, with no DC bias applied, the isolation between input and output ports is 37 dB.
Keywords
Capacitance; Film bulk acoustic resonators; Filter banks; Filtering theory; Insertion loss; Microwave filters; Resonator filters; Barium strontium titanate; acoustically coupled filters; ferroelectric devices; intrinsically switchable devices; radio-frequency (RF) microelectromechanical systems (RF-MEMS);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259733
Filename
6259733
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