DocumentCode
2869161
Title
Localised recombination in quantum dot structures
Author
Sandall, Ian C. ; Pask, Helen J. ; Smowton, Peter M. ; Summers, Huw D. ; Blood, Peter ; Liu, Huiyun ; Hopkinson, Mark
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
The measured non-radiative current varies linearly with ground state radiative current for InAs dots, in agreement with calculations for localised recombination using a radiative lifetime deduced from absorption data, and non-radiative lifetime of 0.8 ns.
Keywords
III-V semiconductors; indium compounds; localised states; radiative lifetimes; semiconductor quantum dots; InAs; ground state; localised recombination; quantum dot; radiative current; radiative lifetime; time 0.8 ns; Absorption; Charge carrier processes; Current measurement; Extraterrestrial measurements; Optical sensors; Quantum dot lasers; Quantum dots; Radiative recombination; Spontaneous emission; Stationary state; 130.5990 (Semiconductors); 140.5960 (Semiconductor Lasers);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628106
Filename
4628106
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