Title :
The effect of p - doping in In(Ga)As quantum dot lasers
Author :
Sandall, I.C. ; Walker, C.L. ; Smowton, P.M. ; Badcock, T. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff
Abstract :
We have measured modal gain and absorption data for doped and undoped quantum dot devices. We show that p doping results in an increase in the amount of gain available at a fixed current.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InGaAs; absorption data; modal gain; p-doping; quantum dot lasers; undoped quantum dot devices; Absorption; Extraterrestrial measurements; Gain measurement; Gallium arsenide; Laser modes; Physics; Quantum dot lasers; Quantum well lasers; Semiconductor device doping; Semiconductor lasers; 130.5990 (Semiconductors); 140.5960 (Semiconductor Lasers);
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628109
