DocumentCode
2869212
Title
A 200ns 150mW 64K HMOS EPROM
Author
Smith, Samuel ; Yeargain, J.
Author_Institution
Motorola Inc., Mesa, AZ, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
144
Lastpage
145
Abstract
An 8K × 8 ultraviolet erasable EPROM fabricated in double poly HMOS technology will be described. Programming is accomplished in a quasi-static manner requiring one TTL level pulse per word.
Keywords
EPROM;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156042
Filename
1156042
Link To Document