Title :
High characteristic temperature of p-doped InAs quantum dots-in-a-well lasers on InP substrate
Author :
Li, Y. ; Rotter, T.J. ; Xin, Y.C. ; Stinz, A. ; Martinez, A. ; Malloy, K.J. ; Patterson, S. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Abstract :
The p-doped quantum dots-in-a-well (DWELL) lasers emitting at 1.44 mum on InP (001) substrates are demonstrated. The characteristic temperature is 210 K in the room temperature range.
Keywords :
III-V semiconductors; current density; indium compounds; laser cavity resonators; quantum dot lasers; semiconductor quantum dots; InAs-InP; InP; InP (001) substrates; laser cavity length; p-doped quantum dots-in-a-well lasers; temperature 210 K; temperature 293 K to 298 K; threshold current density; wavelength 1.44 mum; Gallium arsenide; Indium phosphide; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Threshold current; (140:5960) Semiconductor lasers; (160:3380) laser materials;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628110
