DocumentCode
2869236
Title
High characteristic temperature of p-doped InAs quantum dots-in-a-well lasers on InP substrate
Author
Li, Y. ; Rotter, T.J. ; Xin, Y.C. ; Stinz, A. ; Martinez, A. ; Malloy, K.J. ; Patterson, S. ; Lester, L.F.
Author_Institution
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
The p-doped quantum dots-in-a-well (DWELL) lasers emitting at 1.44 mum on InP (001) substrates are demonstrated. The characteristic temperature is 210 K in the room temperature range.
Keywords
III-V semiconductors; current density; indium compounds; laser cavity resonators; quantum dot lasers; semiconductor quantum dots; InAs-InP; InP; InP (001) substrates; laser cavity length; p-doped quantum dots-in-a-well lasers; temperature 210 K; temperature 293 K to 298 K; threshold current density; wavelength 1.44 mum; Gallium arsenide; Indium phosphide; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Threshold current; (140:5960) Semiconductor lasers; (160:3380) laser materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628110
Filename
4628110
Link To Document