• DocumentCode
    2869259
  • Title

    A miniature RF MEMS metal-contact switch with high biaxial and stress-gradient tolerance

  • Author

    Niu, Chenhui ; Rebeiz, Gabriel M.

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California San Diego (UCSD), La Jolla, 92093, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a miniature RF MEMS (Micro—Electro-Mechanical System) switch design optimized for the high residual stress and stress gradient available in a thin metal layer process. The switch demonstrates a stress gradient tolerance of ±100 MPa/µm, with <40% pull-down voltage change. The up-state capacitance is 9.4 fF and results in 20 dB isolation at 20 GHz. The contact resistance is 3.6 Ω for an Au-Au contact under 30 V actuation voltage.
  • Keywords
    Annealing; CMOS integrated circuits; Micromechanical devices; Microswitches; Reliability; Thickness measurement; CMOS; RF MEMS; switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259743
  • Filename
    6259743