DocumentCode
2869259
Title
A miniature RF MEMS metal-contact switch with high biaxial and stress-gradient tolerance
Author
Niu, Chenhui ; Rebeiz, Gabriel M.
Author_Institution
Department of Electrical and Computer Engineering, University of California San Diego (UCSD), La Jolla, 92093, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents a miniature RF MEMS (Micro—Electro-Mechanical System) switch design optimized for the high residual stress and stress gradient available in a thin metal layer process. The switch demonstrates a stress gradient tolerance of ±100 MPa/µm, with <40% pull-down voltage change. The up-state capacitance is 9.4 fF and results in 20 dB isolation at 20 GHz. The contact resistance is 3.6 Ω for an Au-Au contact under 30 V actuation voltage.
Keywords
Annealing; CMOS integrated circuits; Micromechanical devices; Microswitches; Reliability; Thickness measurement; CMOS; RF MEMS; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259743
Filename
6259743
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