Intrinsically switchable thin film ferroelectric resonators

Author

Sis, Seyit Ahmet ; Lee, Victor ; Phillips, Jamie D. ; Mortazawi, Amir

Author_Institution

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, USA

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

This paper presents DC voltage dependent thin film bulk acoustic wave resonators (FBARs) based on ferroelectric barium strontium titanate (BST). The electrostrictive effect in BST film that enables the resonances to switch on and off with dc bias is discussed. Composite BST FBARs that consist of BST, platinum (Pt), silicon (Si), and oxide (SiO2) layers are discussed by comparing with the conventional FBAR structure. For composite FBARs, the BST layer is primarily used for transduction while the Si and SiO2 layers are used to increase the overall quality factor (Q). Measurement results of a composite FBAR show a Q that exceeds 600 at its parallel resonance frequency of 2.169 GHz and an electromechanical coupling coefficient of 0.68%.

Keywords

Acoustic measurements; Film bulk acoustic resonators; Microwave filters; Silicon; Switches; Titanium compounds; Barium strontium titanate; composite FBAR; ferroelectric devices; intrinsically switchable devices; thin film bulk acoustic wave resonators (FBAR);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6259744

Filename

6259744