DocumentCode :
2869305
Title :
A monolithic GaAs FET RF signal generation chip
Author :
Van Tuyl, R.
Author_Institution :
Hewlett-Packard Co., Santa Clara, CA, USA
Volume :
XXIII
fYear :
1980
fDate :
13-15 Feb. 1980
Firstpage :
118
Lastpage :
119
Abstract :
A GaAs FET monolithic IC for heterodyne signal generation, consisting of a 2.2GHz local oscillator tuned with on-chip varactors, a doubly-balanced mixer, and a 1.5GHz bandwidth IF preamplifier, will be discussed.
Keywords :
Broadband amplifiers; Circuits; FETs; Frequency conversion; Gallium arsenide; Oscillators; Radio frequency; Radiofrequency amplifiers; Schottky diodes; Signal generators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1980.1156049
Filename :
1156049
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2869305
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