DocumentCode
2869305
Title
A monolithic GaAs FET RF signal generation chip
Author
Van Tuyl, R.
Author_Institution
Hewlett-Packard Co., Santa Clara, CA, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
118
Lastpage
119
Abstract
A GaAs FET monolithic IC for heterodyne signal generation, consisting of a 2.2GHz local oscillator tuned with on-chip varactors, a doubly-balanced mixer, and a 1.5GHz bandwidth IF preamplifier, will be discussed.
Keywords
Broadband amplifiers; Circuits; FETs; Frequency conversion; Gallium arsenide; Oscillators; Radio frequency; Radiofrequency amplifiers; Schottky diodes; Signal generators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156049
Filename
1156049
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