DocumentCode :
2869339
Title :
Large signal dynamic behavior of X-band power GaAs FETs
Author :
Sakane, T. ; Arai, Yutaro ; Komizo, H.
Author_Institution :
Fujitsu Labs., Ltd., Kawasaki, Japan
Volume :
XXIII
fYear :
1980
fDate :
13-15 Feb. 1980
Firstpage :
160
Lastpage :
161
Abstract :
Improvement of GaAs FET gate structures has made it possible to minimize the variation of S parameters from small to large signal operation. This report will cover the design of a 12GHz/3.5W amplifier by applying small signal level measurements.
Keywords :
Bandwidth; Copper; FETs; Gallium arsenide; Impedance; MESFETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1980.1156050
Filename :
1156050
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2869339
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