DocumentCode
2869339
Title
Large signal dynamic behavior of X-band power GaAs FETs
Author
Sakane, T. ; Arai, Yutaro ; Komizo, H.
Author_Institution
Fujitsu Labs., Ltd., Kawasaki, Japan
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
160
Lastpage
161
Abstract
Improvement of GaAs FET gate structures has made it possible to minimize the variation of S parameters from small to large signal operation. This report will cover the design of a 12GHz/3.5W amplifier by applying small signal level measurements.
Keywords
Bandwidth; Copper; FETs; Gallium arsenide; Impedance; MESFETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156050
Filename
1156050
Link To Document