Faraday rotation in amorphous chalcogenide films

Author

Zoubir, A. ; Jarvis, R.A. ; Krolikowska, M. ; Wang, R.P. ; Madden, S. ; Ruan, Y. ; Rode, A.V. ; Luther-Davies, B.

Author_Institution

Laser Phys. Centre, Australian Nat. Univ., Canberra, ACT

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We measured the wavelength dispersion of magneto-optic rotation in amorphous chalcogenide thin-films deposited by pulsed laser deposition. The largest rotation is achieved in films with high Germanium concentration being more than 25-times greater than silica.

Keywords

Faraday effect; arsenic compounds; chalcogenide glasses; germanium compounds; pulsed laser deposition; semiconductor thin films; As₂S₃; Faraday rotation; Ge₂₂As₂₀Se₅₈; Ge₃₃As₁₂Se₅₅; amorphous chalcogenide thin-films; germanium concentration; magneto-optic rotation; pulsed laser deposition; wavelength dispersion; Amorphous materials; Dispersion; Germanium; Optical pulses; Pulse measurements; Pulsed laser deposition; Rotation measurement; Silicon compounds; Thin films; Wavelength measurement; (160.3820) Magneto-optical materials; (310.6860) Thin films, optical properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628120

Filename

4628120