• DocumentCode
    28694
  • Title

    Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass

  • Author

    Haschke, Jan ; Amkreutz, Daniel ; Frijnts, Tim ; Kuhnapfel, Sven ; Hanel, Tobias ; Rech, Bernd

  • Author_Institution
    Inst. of Silicon Photovoltaics, Helmholtz-Zentrum Berlin GmbH, Berlin, Germany
  • Volume
    5
  • Issue
    4
  • fYear
    2015
  • fDate
    Jul-15
  • Firstpage
    1001
  • Lastpage
    1005
  • Abstract
    We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (VOC) up to values of 656 mV, which is by far exceeding the previously reported VOC values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.
  • Keywords
    elemental semiconductors; semiconductor doping; semiconductor thin films; silicon; solar cells; Si; SiO2; absorber doping; glass; internal quantum efficiency; liquid phase-crystallized silicon thin-film solar cells; n-type substrates; open-circuit voltage; Doping; Electron beams; Glass; Photovoltaic cells; Photovoltaic systems; Silicon; FrontERA; heterojunction; high absorber doping; laser beam-induced current (LBIC); multicrystalline; polycrystalline;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2015.2412453
  • Filename
    7086288