DocumentCode
28694
Title
Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass
Author
Haschke, Jan ; Amkreutz, Daniel ; Frijnts, Tim ; Kuhnapfel, Sven ; Hanel, Tobias ; Rech, Bernd
Author_Institution
Inst. of Silicon Photovoltaics, Helmholtz-Zentrum Berlin GmbH, Berlin, Germany
Volume
5
Issue
4
fYear
2015
fDate
Jul-15
Firstpage
1001
Lastpage
1005
Abstract
We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (VOC) up to values of 656 mV, which is by far exceeding the previously reported VOC values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.
Keywords
elemental semiconductors; semiconductor doping; semiconductor thin films; silicon; solar cells; Si; SiO2; absorber doping; glass; internal quantum efficiency; liquid phase-crystallized silicon thin-film solar cells; n-type substrates; open-circuit voltage; Doping; Electron beams; Glass; Photovoltaic cells; Photovoltaic systems; Silicon; FrontERA; heterojunction; high absorber doping; laser beam-induced current (LBIC); multicrystalline; polycrystalline;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2015.2412453
Filename
7086288
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