DocumentCode :
28694
Title :
Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass
Author :
Haschke, Jan ; Amkreutz, Daniel ; Frijnts, Tim ; Kuhnapfel, Sven ; Hanel, Tobias ; Rech, Bernd
Author_Institution :
Inst. of Silicon Photovoltaics, Helmholtz-Zentrum Berlin GmbH, Berlin, Germany
Volume :
5
Issue :
4
fYear :
2015
fDate :
Jul-15
Firstpage :
1001
Lastpage :
1005
Abstract :
We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (VOC) up to values of 656 mV, which is by far exceeding the previously reported VOC values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.
Keywords :
elemental semiconductors; semiconductor doping; semiconductor thin films; silicon; solar cells; Si; SiO2; absorber doping; glass; internal quantum efficiency; liquid phase-crystallized silicon thin-film solar cells; n-type substrates; open-circuit voltage; Doping; Electron beams; Glass; Photovoltaic cells; Photovoltaic systems; Silicon; FrontERA; heterojunction; high absorber doping; laser beam-induced current (LBIC); multicrystalline; polycrystalline;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2015.2412453
Filename :
7086288
Link To Document :
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