Title :
A Sub-200mV 6T SRAM in 0.13μm CMOS
Author :
Zhai, Bo ; Blaauw, David ; Sylvester, Dennis ; Hanson, Scott
Author_Institution :
Michigan Univ., Ann Arbor, MI
Abstract :
A deep-subthreshold 6T SRAM functions from 1.2V to 193mV and is fabricated in an industrial 0.13μm CMOS technology. It provides greater than 2× energy-efficiency improvement over the previously proposed MUX-based subthreshold SRAM designs while using half the area. Adjustable footer and headers are introduced, as well as body-bias techniques to allow low-voltage operation.
Keywords :
CMOS memory circuits; SRAM chips; low-power electronics; 0.13 micron; 1.2 to 0.193 V; 6T SRAM; CMOS technology; adjustable footer; adjustable header; body-bias techniques; low-voltage operation; subthreshold SRAM; Circuit stability; Environmental management; Frequency; Inverters; MOS devices; Pulse generation; Random access memory; Robustness; Threshold voltage; Timing;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0852-0
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373429
