Title :
Three-dimensional finite element simulation of semiconductor devices
Author :
Buturla, E. ; Cottrell, P. ; Grossman, Brett ; Salsburg, K. ; Lawlor, Mathew ; McMullen, C.
Author_Institution :
IBM Corporation, Essex Junction, VT, USA
Abstract :
Mobile carrier transport in semiconductors, simulated in three dimensions, using the finite element method, will be reported. The algorithm has been used to model the combined effect of short channel lengths and narrow channel widths on the threshold of an IGFET.
Keywords :
Avalanche breakdown; Circuit simulation; FETs; Finite element methods; Integrated circuit interconnections; Interpolation; Nonlinear equations; Poisson equations; Predictive models; Semiconductor devices;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156066
