DocumentCode :
2869642
Title :
Three-dimensional femtosecond photochemical etching in silicon
Author :
Yujun Deng ; Huimin Ouyang ; Fauchet, Philippe M. ; Knox, Wayne H.
Author_Institution :
Inst. of Opt., Univ. of Rochester, Rochester, NY
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Micron-size channels have been made inside silicon by femtosecond laser-assisted HF etching. The etching is guided by localized carriers generated via two-photon absorption. Its potential of 3-D drilling has been demonstrated.
Keywords :
drilling; laser beam etching; micromachining; silicon; 3D drilling; 3D femtosecond photochemical etching; femtosecond laser; micron size channels; two photon absorption; Absorption; Etching; Focusing; Hafnium; Laser beams; Optical pulses; Photochemistry; Pulse amplifiers; Silicon; Ultrafast optics; (230.4000) Microstructure fabrication; (320.2250) Femtosecond phenomena;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628137
Filename :
4628137
Link To Document :
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