DocumentCode
2869699
Title
Multiple coupling inductors model based on four-port measurement
Author
Zong, Zhirui ; Kang, Kai
Author_Institution
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper analyzes the coupling effects among four on-chip spiral inductors and develops a multiple coupling inductors model based on four-port S-parameters up to 50 GHz. Each single inductor model is directly extracted from measurements based on a one-port extraction algorithm, as well as the mutual coupling elements among inductors. The modeled results agree well with the measured results up to self-resonance frequency. Test structures are fabricated using a commercial 0.18µm RFCMOS process.
Keywords
Abstracts; Educational institutions; π-model; coupled inductors; coupling effects; integrated circuit modeling; monolithic microwave integrated circuits (MMICs); parameter extraction; radio-frequency integrated circuits (RFICs);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259770
Filename
6259770
Link To Document