DocumentCode
2869707
Title
A dense gate matrix layout style for MOS LSI
Author
Lopez, A. ; Hung-Fai Law
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
212
Lastpage
213
Abstract
This paper will discuss a layout style - gate matrix - for CMOS VLSI in the polysilicon gate technology. Approach, simplifying and unifying layout procedure by using an orderly structure, a matrix, characterized by rows of polysilicon and columns of diffusion, has been tested in a 20,000- transistor layout.
Keywords
CMOS logic circuits; CMOS technology; Design automation; Large scale integration; Logic design; Logic devices; MOS devices; Microprocessors; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156074
Filename
1156074
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