Title :
A numerical analysis for very small semiconductor devices
Author :
Yoshii, Ari ; Horiguchi, Shogo ; Sudo, Toshio
Author_Institution :
NTT Musashino Electrical Communication Lab., Tokyo, Japan
Keywords :
Charge carrier processes; Electron devices; Finite difference methods; Finite element methods; Laboratories; Nonlinear equations; Numerical analysis; Poisson equations; Radiative recombination; Semiconductor devices;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1980.1156086
