A highly integrated dual band CMOS frequency synthesizer and its application in a WLAN 802.11g transceiver

Author

Ma, Huainan ; Sun, Weigang ; Hu, Haixing ; Zheng, Jihua ; Wang, Wenshen

Author_Institution

RF Integrated Corp., Irvine, CA, USA

fYear

2004

fDate

18-21 Aug. 2004

Abstract

A dual-band frequency synthesizer with integrated VCOs has been designed and fabricated in commercial 0.25μm RFCMOS process for 2.4GHz 802.11 b/g applications. The RF side (2.1GHz) achieves -124 dBc/Hz phase noise performance at 1MHz offset and 0.9 degrees of integrated phase error. The IF side (750MHz) achieves -130 dBc/Hz at 1MHz offset and 0.4 degrees of integrated phase error. The power up to synthesizer ready time is 40μS for both sides. The synthesizer has been implemented to a single-chip 802.11b/g RF transceiver. Bench testing has demonstrated excellent performance at 802.11g 54Mbps/64QAM operation mode.

Keywords

CMOS integrated circuits; IEEE standards; frequency synthesizers; integrated circuit design; radiofrequency integrated circuits; telecommunication standards; transceivers; voltage-controlled oscillators; wireless LAN; 0.25 micron; 2.1 GHz; 2.4 GHz; 750 MHz; RF transceiver; RFCMOS process; WLAN 802.11g transceiver; integrated VCO; integrated dual band CMOS frequency synthesizer; integrated phase error; Bandwidth; Dual band; Frequency synthesizers; Phase detection; Phase locked loops; Phase noise; Radio frequency; Transceivers; Voltage-controlled oscillators; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings

Print_ISBN

0-7803-8401-6

Type

conf

DOI

10.1109/ICMMT.2004.1411441

Filename

1411441