DocumentCode :
287009
Title :
Reflectance and transmittance in heteroface GaAs solar cells
Author :
Bustani, A.Al. ; Feteha, M.Y.
Author_Institution :
Environ. Electron. Res. Group, Univ. of Central Lancashire, UK
fYear :
1993
fDate :
17-19 Nov 1993
Firstpage :
55
Lastpage :
60
Abstract :
The results of reflection and transmission calculations for heteroface AlGaAs-GaAs solar cells are presented. Effects of single and double layer AR coating are included in a matrix formulation analysis. Due to reflection losses the only transmitted light is about 66.415% of the AMO spectrum. By applying a double antireflection coating with optimum thicknesses, this transmission can be increased to around 87% for Al0.8Ga0.2As taking into account the grid shadow and window layer effect on the optical properties (reflection and transmission)
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; light reflection; light transmission; p-n heterojunctions; semiconductor device models; Al0.8Ga0.2As; AlGaAs-GaAs; antireflection coating; grid shadow; losses; matrix formulation analysis; p-n heterojunctions; reflectance; reflection; solar cells; transmission; transmittance; window layer effect;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Renewable Energy - Clean Power 2001, 1993., International Conference on
Conference_Location :
London
Print_ISBN :
0-85296-605-9
Type :
conf
Filename :
264122
Link To Document :
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