DocumentCode :
2870159
Title :
A 256K RAM fabricated with molybdenum-polysilicon technology
Author :
Mano, Toru ; Takeya, K. ; Watanabe, Toshio ; Kiuchi, Kentaro ; Ogawa, Tomomi ; Hirata, Kazufumi
Author_Institution :
NTT Musashino Electrical Communication Laboratory, Tokyo, Japan
Volume :
XXIII
fYear :
1980
fDate :
13-15 Feb. 1980
Firstpage :
234
Lastpage :
235
Keywords :
Circuit simulation; Clocks; Decoding; Emergency power supplies; Pulse amplifiers; Pulse circuits; Read-write memory; Space vector pulse width modulation; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1980.1156098
Filename :
1156098
Link To Document :
بازگشت