DocumentCode
2870159
Title
A 256K RAM fabricated with molybdenum-polysilicon technology
Author
Mano, Toru ; Takeya, K. ; Watanabe, Toshio ; Kiuchi, Kentaro ; Ogawa, Tomomi ; Hirata, Kazufumi
Author_Institution
NTT Musashino Electrical Communication Laboratory, Tokyo, Japan
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
234
Lastpage
235
Keywords
Circuit simulation; Clocks; Decoding; Emergency power supplies; Pulse amplifiers; Pulse circuits; Read-write memory; Space vector pulse width modulation; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156098
Filename
1156098
Link To Document