Title :
Gallium nitride-organic semiconductor heterojunctions for optoelectronic devices
Author :
Song, Yoon-Kyu ; Hyunjin Kim ; Atay, Tolga ; Patterson, William R. ; Nurmikko, Arto V. ; Gherasimova, Maria ; Kim, Kyung K. ; Han, Jung
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI
Abstract :
We report on study of GaN/InGaN-organic semiconductor heterostructures where electronic transport in planar junction structures shows electron or/and hole injection across the interfaces resulting e.g. light emission from the nitride quantum wells.
Keywords :
III-V semiconductors; gallium compounds; integrated optoelectronics; organic semiconductors; quantum well devices; semiconductor heterojunctions; wide band gap semiconductors; GaN-InGaN; electron injection; electronic transport; gallium nitride-organic semiconductor heterojunctions; hole injection; light emission; nitride quantum wells; optoelectronic devices; planar junction structures; Charge carrier processes; Electron emission; Gallium compounds; Gallium nitride; Heterojunctions; III-V semiconductor materials; Light emitting diodes; Optical devices; Optoelectronic devices; Organic materials; 230.3670; 300.6280;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628171
