DocumentCode
2870272
Title
High brightness AlGaInP-based LEDs with the stripe patterned omni-directional reflector
Author
Lee, Y.J. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C. ; Hsu, T.C. ; Hsieh, M.H. ; Jou, M.J. ; Lee, B.J.
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
An n-side-up AlGaInP-based LED with a stripe-patterned omni-directional reflector (ODR) was fabricated by adopting the adhesive-layer bonding scheme. The mechanism of the enhancement of light extraction is discussed in this report.
Keywords
III-V semiconductors; MOCVD coatings; aluminium compounds; light emitting diodes; light reflection; AlGaInP; adhesive-layer bonding scheme; high brightness LED; light extraction enhancement; stripe patterned omni-directional reflector; Bonding; Brightness; Chemical vapor deposition; Gold; Light emitting diodes; Optical reflection; Plasma applications; Power generation; Shape control; Substrates; (230.3670);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628173
Filename
4628173
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