DocumentCode
2870458
Title
Quest to semiconductor intraband terahertz lasers : From p-Ge intersubband and CR lasers to cascade and Si donor Raman lasers
Author
Andronov, Alexander A.
Author_Institution
Inst. for Phys. of Microstruct., Russian Acad. of Sci., Nizhni Novgorod
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Survey of research directed to create semiconductor intraband THz lasers based on bulk Ge and Si samples and on quantum well systems is given. Some recent proposals and observations in the field are also covered.
Keywords
Raman lasers; elemental semiconductors; germanium; infrared sources; quantum well lasers; silicon; submillimetre wave lasers; CR Lasers; Ge; Si; Si donor Raman lasers; cascade lasers; intraband terahertz lasers; p-Ge intersubband lasers; semiconductor lasers; Chromium; Laser modes; Laser transitions; Optical pumping; Optical scattering; Optical superlattices; Pump lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; (140 0140) Laser and Laser Optics; (140, 3270) Infrared and far-infrared Lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628184
Filename
4628184
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