DocumentCode
2870514
Title
Terahertz silicon lasers
Author
Hübers, H.W. ; Pavlov, S.G. ; Shastin, V.N.
Author_Institution
Inst. of Planetary Res., German German Aerosp. Genter (DLR), Berlin
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
Keywords
antimony; arsenic; bismuth; electron-phonon interactions; elemental semiconductors; excited states; laser tuning; optical pumping; phosphorus; photoexcitation; photoionisation; semiconductor lasers; silicon; terahertz wave devices; Si:As; Si:Bi; Si:P; Si:Sb; electron-phonon interaction; frequency tunability; group-V donors; intracenter transitions; optical excitation; photoionization; semiconductor laser; terahertz silicon lasers; Free electron lasers; Frequency; Laser excitation; Laser transitions; Optical pumping; Optical sensors; Pump lasers; Quantum cascade lasers; Semiconductor lasers; Silicon; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628187
Filename
4628187
Link To Document