MOCVD-grown room temperature continuous-wave quantum cascade lasers without lateral regrowth

Author

Liu, Zhijun ; Wasserman, Daniel ; Howard, Scott S. ; Gmachl, Claire F. ; Wang, Xiaojun ; Tanbun-Ek, Tawee ; Cheng, Liwei ; Choa, Fow-Sen

Author_Institution

Dept. of Electr. Eng., Princeton Univ., Princeton, NJ

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Room temperature, continuous-wave operation of lambda~8.2 mum quantum cascade lasers grown by MOCVD is reported. The lasers have been processed as double-channel ridge waveguides without the need for buried heterostructures.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gold; indium compounds; quantum cascade lasers; semiconductor lasers; waveguide lasers; Au-In_0.52Al_0.48As-In_0.53Ga_0.47As; MOCVD; buried heterostructures; continuous-wave operation; double-channel ridge waveguides; quantum cascade lasers; temperature 293 K to 298 K; Chemical lasers; Gas lasers; Gold; Molecular beam epitaxial growth; Optical design; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Temperature; Waveguide lasers; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628189

Filename

4628189