• DocumentCode
    2870556
  • Title

    A 50GS/s Distributed T/H Amplifier in 0.18μm SiGe BiCMOS

  • Author

    Lee, Jaesik ; Baeyens, Yves ; Weiner, Joseph ; Chen, Young-Kai

  • Author_Institution
    Alcatel-Lucent, Murray Hill, NJ
  • fYear
    2007
  • fDate
    11-15 Feb. 2007
  • Firstpage
    466
  • Lastpage
    616
  • Abstract
    A 3-stage distributed T/H amplifier (DTHA) is presented for high-bit-rate optical receivers and millimeter-wave radios. Distributed topology enhances the bandwidth of the DTHA to >42GHz in track mode. The DTHA achieves 2-tone SFDR of 46dB with 15GHz input signal. The 1.47mm2 chip designed in a 0.18μm SiGe BiCMOS process dissipates 640mW.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; sample and hold circuits; 0.18 micron; 15 GHz; 640 mW; BiCMOS process; SiGe; distributed T/H amplifier; distributed topology; high-bit-rate optical receivers; millimeter-wave radios; Bandwidth; BiCMOS integrated circuits; Clocks; Distributed amplifiers; Frequency; Germanium silicon alloys; Microstrip; Silicon germanium; Switches; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0852-0
  • Electronic_ISBN
    0193-6530
  • Type

    conf

  • DOI
    10.1109/ISSCC.2007.373496
  • Filename
    4242467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2870556