Title :
A 0.05Ã\x970.05mm2 RFID Chip with Easily Scaled-Down ID-Memory
Author :
Usami, Mitsuo ; Tanabe, Hisao ; Sato, Akira ; Sakama, Isao ; Maki, Yukio ; Iwamatsu, Toshiaki ; Ipposhi, Takashi ; Inoue, Yasuo
Author_Institution :
Hitachi, Tokyo
Abstract :
An ultra-small RFID chip uses an electron beam for writing 1T memory cells. A 90nm SOI CMOS process and double-surface electrode chip structures enable the design of 0.05times0.05mm2 and 5mum-thick RFID chips with small, low-cost and highly-reliable 128b ID-memory. The chip is verified at a carrier frequency of 2.45GHz with measured communication distance of 300mm.
Keywords :
CMOS integrated circuits; electron beams; integrated memory circuits; radiofrequency identification; radiofrequency integrated circuits; silicon-on-insulator; 128 bit; 2.45 GHz; 90 nm; SOI CMOS process; double-surface electrode chip structures; electron beam; memory cells; scaled-down ID-memory; ultra-small RFID chip; Control systems; Counting circuits; Dry etching; Electrodes; Nonvolatile memory; Pins; Radiofrequency identification; Semiconductor diodes; Tellurium; Writing;
Conference_Titel :
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0853-9
Electronic_ISBN :
0193-6530
DOI :
10.1109/ISSCC.2007.373504
