• DocumentCode
    2871040
  • Title

    An 18ns CMOS/SOS 4K static RAM

  • Author

    Isobe, M. ; Uchida, Yasuo ; Maeguchi, K. ; Mochizuki, Takashi ; Kimura, Mizue ; Hatano, Hiroshi ; Mizutani, Y. ; Tango, H.

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    A 4K static RAM using 2μm MoSi2-gate CMOS/SOS technology, affording 18ns access time, 200mW operating power and 50μW standby power will be covered.
  • Keywords
    CMOS technology; Capacitance; Fabrication; Hysteresis; MOSFETs; Operational amplifiers; Random access memory; Read-write memory; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156152
  • Filename
    1156152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871040