DocumentCode
2871255
Title
A 32K static RAM utilizing a three-transistor cell
Author
Ching-Lin Jiang ; Plachno, R.
Author_Institution
Mostek Corporation, Carrollton, TX, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
86
Lastpage
87
Abstract
This paper will discuss the use of a 3-transistor memory cell, with two cross-coupled transistors, an access transistor and a MOS capacitor, that affords static operation and low standby power operation.
Keywords
Circuits; Clocks; Diodes; Leakage current; MOS capacitors; MOSFETs; Random access memory; Read-write memory; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156167
Filename
1156167
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