• DocumentCode
    2871265
  • Title

    A 45ns fully-static 16K MOS ROM

  • Author

    Wong, Johnson ; Siu, P. ; Ebel, M.

  • Author_Institution
    Synertek, Inc., Santa Clara, CA, USA
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    This report will discuss the design of a ROM that makes extensive use of small signal amplification and 0V threshold devices to reduce active power to 350mW and standby power to 75mW. The device is contact mask programmable and has a die size of 20,300 mil2.
  • Keywords
    Circuits; Power dissipation; Read only memory; Semiconductor device packaging; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156168
  • Filename
    1156168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871265