Title :
Growth of p-type ZnO and its application to ZnO LEDs
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.
Keywords :
light emitting diodes; p-n junctions; semiconductor growth; LED; ZnO; light emitting diode; p-n homojunction; semiconductor growth; voltage 3.2 V; wavelength 380 nm; Energy barrier; Gallium nitride; Light emitting diodes; Materials science and technology; Nitrogen; Photonic band gap; Solid state lighting; Temperature; Threshold voltage; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628245
