• DocumentCode
    2871443
  • Title

    A 2GHz 0.25μm SiGe BiCMOS Oscillator with Flip-Chip Mounted BAW Resonator

  • Author

    Razafimandimby, S. ; Cathelin, A. ; Lajoinie, J. ; Kaiser, Alexander ; Belot, D.

  • Author_Institution
    STMicroelectronics, Crolles
  • fYear
    2007
  • fDate
    11-15 Feb. 2007
  • Firstpage
    580
  • Lastpage
    623
  • Abstract
    An RF oscillator consisting of a BAW resonator on top of a SiGe BiCMOS IC is presented. The circuit achieves a phase noise of -124dBc/Hz at 100kHz carrier offset, -160dBc/Hz floor and supply pushing of 65ppm/V while consuming 12mW in an IC footprint of 0.043mm2.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bulk acoustic wave devices; flip-chip devices; radiofrequency oscillators; resonators; 0.25 micron; 12 mW; 2 GHz; BiCMOS oscillator; RF oscillator; SiGe; flip-chip mounted BAW resonator; Assembly; BiCMOS integrated circuits; Frequency synthesizers; GSM; Germanium silicon alloys; Oscillators; Phase noise; Radio frequency; Silicon germanium; Working environment noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0852-0
  • Electronic_ISBN
    0193-6530
  • Type

    conf

  • DOI
    10.1109/ISSCC.2007.373553
  • Filename
    4242524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871443