Title :
A 30ns 16 × 1 fully static RAM
Author :
Kang, Sook-Yang ; Allan, J. ; Ashmore, B. ; Herndon, T. ; Wolpert, S. ; Bruncke, W. ; Thorpe, T. ; Spicer, John
Author_Institution :
Texas Instruments, Inc., Houston, TX, USA
Abstract :
This report will describe a fully-static 16K×1 RAM utilizing a double level poly, scaled NMOS technology. A typical 30ns access time has been achieved with 600mW power dissipation.
Keywords :
Circuits; Decoding; Emergency power supplies; Instruments; Power dissipation; Pulsed power supplies; Space vector pulse width modulation; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156184
