Title :
Performance of dual-gate GaAs MESFETs as phase shifters
Author :
Pengelly, Raymond S. ; Suckling, C. ; Turner, Jessica
Author_Institution :
Plessey Research (Caswell) Ltd., Northants, England
Abstract :
Investigations into the use of dual-gate GaAs MESFETs as phase shifters at S band have shown that a transmission phase shift up to 90° can be realized, and that the majority of this phase shift is due to the changes in device parameters interacting with the input matching network.
Keywords :
Circuit optimization; FETs; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFETs; Phase shifters; Phased arrays; Radar applications; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156199
