Title :
Effect of crystal orientation on fracture strength and fracture toughness of single crystal silicon
Author :
Ando, Taeko ; Li, Xueping ; Nakao, Shigeki ; Kasai, Takashi ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution :
Dept. of Micro Syst. Eng., Nagoya Univ., Japan
Abstract :
This paper presents the dependence of fracture toughness, fracture strength, and fracture behavior, such as crack propagation, on the crystal orientation of single-crystal silicon. We conducted on-chip tensile testing to measure fracture strength and fracture toughness of single-crystal silicon films with [100] and [110] surface in the <100> and <110> loading direction. The loading direction had a significant effect on fracture toughness, which was 2.17 MPa√m in the <100> direction and 1.27 MPa√m in <110>. However, the fracture stress varies with both loading direction and surface orientation. We observed a fracture specimen on which a [111] cleavage plane eventually appeared on any crystal types of the specimen.
Keywords :
cracks; crystal orientation; elemental semiconductors; fracture toughness; internal stresses; semiconductor thin films; silicon; tensile testing; MEMS; Si; Si[111] cleavage plane; crack propagation; crystal orientation effect; fracture strength; fracture stress; fracture toughness; loading direction; on-chip tensile testing; silicon [100] surface; silicon [110] surface; single crystal silicon films; surface orientation; Force measurement; Mechanical factors; Micromechanical devices; Semiconductor films; Semiconductor thin films; Silicon; Stress measurement; Surface cracks; Tensile stress; Testing;
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
DOI :
10.1109/MEMS.2004.1290551