DocumentCode :
287209
Title :
Semiconductor power MOSFETs devices in series
Author :
Guidini, R. ; Chatroux, D. ; Guyon, Y. ; Lafore, D.
Author_Institution :
CEA, Pierrelatte, France
fYear :
1993
fDate :
13-16 Sep 1993
Firstpage :
425
Abstract :
Power semiconductors are more reliable then thyratrons. Consequently new switching systems using semiconductor devices are being studied. Power MOSFETs and IGBTs offer a simpler alternative. The advantages are the simplicity of the driving circuit and their high swithing speed. But applications of these devices are limited to maximum voltage, generally up to 1000/1500 V. However, fast power switches with voltage ratings much higher than those of single fast switching can be made by connecting these devices in series. This paper presents and discusses the value of the master/slave principle series connection. The master/slave principle is evaluated with the circuit simulator PSPICE
Keywords :
SPICE; digital simulation; insulated gate field effect transistors; power transistors; semiconductor switches; PSPICE; circuit simulator; driving circuit; fast power switches; master/slave principle series connection; power MOSFETs; swithing speed; voltage ratings;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
Type :
conf
Filename :
264917
Link To Document :
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