Title :
Power GaAs FET amplifiers
Author_Institution :
Bell Telephone Laboratories, Allentown, PA, USA
Abstract :
The latest developments in power GaAs FET amplifiers will be assessed, with emphasis on circuit design for performance and reliability. Both hybrid and monolithic designs will be discussed.
Keywords :
Broadband amplifiers; Circuit optimization; Frequency; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Microwave devices; Power amplifiers; Tuned circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156215
