Title :
Comparison of semiconductor device losses in hard switched and zero voltage switched inverter systems
Author :
Dehmlow, M. ; Heumann, K. ; Sommer, R.
Author_Institution :
Tech. Univ., Berlin, Germany
Abstract :
Presents a detailed investigation of losses in IGBT modules in hard switched PWM and zero voltage switched inverter systems. To measure the semiconductor device losses a one phase test circuit in which the semiconductor devices are stressed in similar way as in a real inverter system is described. The test circuit allows the investigation of the semiconductor devices in a hard switched inverter, an active clamped resonant DC link inverter, and an auxiliary resonant commutated pole inverter
Keywords :
insulated gate bipolar transistors; invertors; losses; power convertors; pulse width modulation; IGBT modules; PWM; active clamped resonant DC link inverter; auxiliary resonant commutated pole inverter; hard switched; inverter systems; one phase test circuit; semiconductor device losses; zero voltage switched;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
