Correlation between technology and the electrical characteristics of a power polysilicon emitter bipolar transistor

The use of polysilicon emitter bipolar transistors permits a greater reduction of the emitter-base saturation current density value, this leading to a significant current gain increase. The aim is to fabricate a polysilicon emitter bipolar transistor for power applications. To do this, the PP-planar junction termination has been optimized to obtain a blocking voltage capability of about 600 V. The authors have studied different polysilicon deposition steps compatible with the technology of power bipolar transistor fabrication and their influence on electrical characteristics