Title :
Power MOSFET design and modelling tool for power electronics
Author :
Beydoun, B. ; Tranduc, H. ; Oms, F. ; Charitat, G. ; Rossel, P. ; Lavigne, A. Peyre
Author_Institution :
Lab. d´´Automat. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
Presents a power MOSFETs design (PMD) tool. Physical properties, layout, technological process data and thermal dependence of vertical MOSFET structure are considered. PMD permits the `a priori´ determination of the electrical characteristics of standard and new devices in power electronics circuits
Keywords :
circuit CAD; insulated gate field effect transistors; power electronics; power transistors; semiconductor device models; PMD; electrical characteristics; layout; physical properties; power electronics; technological process data; thermal dependence; vertical MOSFET structure;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
