Title :
Wavelet-based grid generation toward full-wave physical analysis of microwave/mm-wave transistors
Author :
Movahhedi, Masoud ; Abdipour, Abdolali
Author_Institution :
Dept. of Electr. Eng., AmirKabir Univ. of Technol., Tehran, Iran
Abstract :
A new wavelet-based simulation approach for the analysis and simulation of microwave/mm-wave transistors is presented. For the first time in the literature, Daubechies-base wavelet approach is applied to semiconductor equations to generate a nonuniform mesh. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The procedure of nonuniform mesh generation is described in detail by simulating a MESFET. It is shown that good accuracy can be achieved while compressing the number of unknown by 70%.
Keywords :
Schottky gate field effect transistors; microwave transistors; millimetre wave transistors; semiconductor device models; wavelet transforms; Daubechies-base wavelet approach; MESFET; full-wave physical analysis; microwave transistors; mm-wave transistors; nonuniform mesh generation; semiconductor equations; transistor simulation; wavelet-based grid generation; Analytical models; Circuit simulation; Equations; Finite difference methods; Mesh generation; Microwave devices; Microwave generation; Microwave technology; Microwave transistors; Wavelet analysis;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2004. ICMMT 4th International Conference on, Proceedings
Print_ISBN :
0-7803-8401-6
DOI :
10.1109/ICMMT.2004.1411559
