DocumentCode
2872265
Title
A High Compliance Input and Output Regulated Body-Driven Current Mirror for Deep-Submicron CMOS
Author
Murphy, Marc W. ; El-Masry, Ezz I. ; Elshurafa, Amro M.
Author_Institution
Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS
fYear
2006
fDate
16-19 Dec. 2006
Firstpage
13
Lastpage
16
Abstract
A current mirror circuit that uses body-driven MOSFETs to achieve an ultra-low input and output voltage is presented. High-gain amplifiers, suitable for a deep submicron process, are used to provide matching as well as input and output regulation. Simulation results were verified with measurements performed on a fabricated chip using the 90-nm CMOS process from ST-Microelectronics.
Keywords
CMOS analogue integrated circuits; MOSFET; VLSI; current mirrors; semiconductor device models; ST-Microelectronics; analog VLSI circuits; body-driven MOSFETs; current mirror circuit; deep submicron CMOS process; high-gain amplifiers; size 90 nm; CMOS process; Circuit simulation; Circuit topology; Immune system; Impedance; MOSFETs; Mirrors; Semiconductor device measurement; Testing; Threshold voltage; Analog integrated circuits; CMOS; mirrors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006. ICM '06. International Conference on
Conference_Location
Dhahran
Print_ISBN
1-4244-0764-8
Electronic_ISBN
1-4244-0765-6
Type
conf
DOI
10.1109/ICM.2006.373642
Filename
4243636
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