• DocumentCode
    2872356
  • Title

    Polarization field engineering with Type-II InGaN-GaNAs quantum well for improved nitride gain media at 420–550 nm

  • Author

    Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Novel type-II InGaN-GaNAs quantum well is presented and analyzed as improved gain media for efficient light emitting diodes and laser diodes emitting at 420-nm up to 550-nm, with a large electronhole wavefunction overlap (Gammae_hh >65-70%).
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; quantum well lasers; wide band gap semiconductors; InGaN-GaNAs; electronhole wavefunction overlap; laser diodes; light emitting diodes; polarization field engineering; quantum well; wavelength 420 nm to 550 nm; Diode lasers; Gallium nitride; Lead; Light emitting diodes; Optical materials; Optical polarization; Piezoelectric polarization; Quantum computing; Quantum well lasers; Stationary state; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.0250) Optoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628309
  • Filename
    4628309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2872356