DocumentCode
2872371
Title
Uncooled 2.5 Gb/s Operation of 1.3 μm GaInNAs double quantum well lasers up to 110 °C
Author
Wei, Y.-Q. ; Gustavsson, J.S. ; Sadeghi, M. ; Wang, S.M. ; Modh, P. ; Larsson, A. ; Savolainen, P. ; Melanen, P. ; Sipilä, P.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We demonstrate uncooled 2.5 Gb/s operation up to 110degC of 1.3 mum GaInNAs double quantum well lasers with low threshold current and excellent temperature stability.
Keywords
gallium compounds; indium compounds; quantum well lasers; GaInNAs; bit rate 2.5 Gbit/s; quantum well lasers; temperature 110 C; temperature stability; threshold current; wavelength 1.3 mum; Bandwidth; Eyes; Gallium arsenide; Optical materials; Optical waveguides; Quantum well lasers; Temperature dependence; Threshold current; Voltage; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628310
Filename
4628310
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