Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534nm

Author

Wistey, Mark A. ; Bank, Seth R. ; Bae, Hopil ; Yuen, Homan B. ; Pickett, Evan R. ; Harris, James S.

Author_Institution

Solid State Photonics Lab., Stanford Univ., Stanford, CA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Electrically pulsed GaInNAsSb-based, vertical cavity surface emitting lasers (VCSELs) at 1534 nm are reported. The lasers operated below -25C due to a gain-cavity misalignment. These are the first monolithic, C-band VCSELs on GaAs.

Keywords

III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; integrated optics; laser cavity resonators; optical pumping; semiconductor lasers; surface emitting lasers; C-band VCSELs; GaInNAsSb; electrically pulsed-based VCSELs; gain-cavity misalignment; laser operation; monolithic vertical cavity surface emitting lasers; wavelength 1534 nm; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical surface waves; Plasma temperature; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (060.2380) Fiber optics sources and detectors; (140.5960) Semiconductor lasers; (160.6000) Semiconductors, including MQW; (250.7260) Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628312

Filename

4628312